We study spin-valley and lattice-pseudo spin currents in a dualferromagnetic-gated silicene-based junction. Silicene has buckled atomicstructure which allows us to take sublattice-dependent ferromagnetism intoaccount in the investigation. One of the study results show that transmissionat the junctions exhibits anisotropic property only in anti-parallel cases.Interestingly, the studied junctions can be switched from a pure spin-polarizerto a pure valley-polarizer by reversing directions of exchange fields in theparallel junctions. The perfect control of spin-valley currents can be doneonly in the parallel cases and its resolution can be enhanced by increasinggate potential between the ferromagnetic barriers. The asymmetric barriers ofanti-parallel junction is found to destroy both spin and valley filteringeffects and yield a novel result, pure sub-lattice pseudo-spin polarization.The current in the anti-parallel junctions can be controlled to flow solely ineither A or B sub-lattice, saying that the controllable lattice current insilicene is created in double ferromagnetic-gated junction. Our work revealsthe potential of dual ferromagnetic-gated silicene junction which may bepossible for applications in spin-valleytronics and lattice-pseudospintronics.
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